VISHAY BYV 27-150 TEL - Ultra fast avalanche sinterglass diode, 150 V, 2 A, SOD-57

10.59 EUR
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Ultra Fast Avalanche Sinterglass Diode SOD57, 150V, 2A
Features
• Controlled avalanche characteristic
• Low forward voltage
• Ultra fast recovery time
• Glass passivated junction
• Hermetically sealed package
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Applications
Very fast rectification diode e.g. for switch mode
power supply
Mechanical Data
• Case: SOD-57 Sintered glass case
• Terminals: Plated axial leads, solderable per MILSTD-750, Method 2026
• Polarity: Color band denotes cathode end
• Mounting Position: Any
• Weight: approx. 369 mg
Delivery Cost: 9.95 EUR
Availability: in stock
Delivery Time: 4-5 business days
Condition: new
Ultra Fast Avalanche Sinterglass Diode SOD57, 150V, 2A
Features
• Controlled avalanche characteristic
• Low forward voltage
• Ultra fast recovery time
• Glass passivated junction
• Hermetically sealed package
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Applications
Very fast rectification diode e.g. for switch mode
power supply
Mechanical Data
• Case: SOD-57 Sintered glass case
• Terminals: Plated axial leads, solderable per MILSTD-750, Method 2026
• Polarity: Color band denotes cathode end
• Mounting Position: Any
• Weight: approx. 369 mg
Delivery Cost: 9.95 EUR
Availability: in stock
Delivery Time: 4-5 business days
Condition: new
Comparison of Similar Products



Nominal current: Ifav = 150 mA
Periodic peak reverse voltage Vrrm: 100 V
Housing: MiniMELF: SOD-80C
Weight approx.: 0.04 g
Standard packaging : taped on a roll

- Optimised for fast switching
- Low forward voltage drop

Features
• Controlled avalanche characteristic
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• Ultra fast soft recovery switching
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Applications
• TV
• SMPS
• Power feedback systems
Mechanical Data
• Case: SOD-64
• Terminals: Plated axial leads, solderable per MILSTD-750, Method 2026
• Polarity: Color band denotes cathode end
• Mounting Position: Any
• Weight: approx. 858 mg

FEATURES
- Low Gate Charge Qg Results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Enhanced Body Diode dV/dt Capability
- Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
- Hard Switching Primary or PFC Switch
- Switch Mode Power Supply (SMPS)
- Uninterruptible Power Supply
- High Speed Power Switching
- Motor Drive

FEATURES
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Isolated Central Mounting Hole
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- Compliant to RoHS Directive 2002/95/EC


• glass passivated junction
• hermetically sealed package
• low reverse current
• soft recovery characteristics
Applications
Fast rectifier and switch for example for TV–line output circuits and switch mode power supply

FEATURES
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Ultra Low On- Resistance
- Very Low Thermal Resistance
- Isolated Central Mounting Hole
- 175 °C Operating temperature
- Fast Switching
- Compliant to RoHS Directive 2002/95/EC

Glass passivated high efficiency rugged dual rectifier diodes in a plastic envelope, featuring low forward voltage drop, ultra-fast recovery times and soft recovery characteristic. These devices can withstand reverse voltage transients and have guaranteed reverse surge and ESD capability. They are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and switching losses are essential.

- Super fast diodes with glass passivated chip for the maximum reliability
- Designed as avalanche diodes

Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies.
The BYV32E series is supplied in the SOT78 conventional leaded package.
The BYV32EB series is supplied in the SOT404 surface mounting package.
Features
• low forward volt drop
• fast switching
• soft recovery characteristic
• reverse surge capability
• high thermal cycling performance
• low thermal resistance

General Description
DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS.
Features
• Low V CE(sat) Fast IGBT technology
• Low switching loss
• Maximum junction temperature 175 o C
• V CE(sat) with positive temperature coefficient
• Fast & soft reverse recovery anti parallel FWD
• Lead free package
Typical Applications
• Inverter for motor drive
• AC and DC servo drive amplifier
• Uninterruptible power supply

Power MOSFET
N-Channel Enhancement Mode
Fast Recovery Diode
Avalanche Rated
features
- Fast Recovery diode
- Unclamped Inductive Switching (UIS) rated
- International standard packages
- Low package inductance
- easy to drive and to protect
Advantages
- Easy to mount
- Space savings
- high power density

- ultra low on resistance
- Surface Mount (IRFR4105)
- Straight Lead (IRFU4105)
- Fast Switching
- Fully Avalanche Rated
- lead free
description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

ISOPLUS247TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
features
- International standard isolated package
- UL recognized package
- Silicon chip on Direct Copper Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation - Unclamped Inductive Switching (UIS) rated
- Low package inductance
- easy to drive and to protect - Fast intrinsic diode
Advantages
- Easy to mount
- Space savings
- high power density

Features
• Controlled avalanche characteristic
• Low forward voltage
• Ultra fast recovery time
• Glass passivated junction
• Hermetically sealed package
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Applications
Very fast rectification diode e.g. for switch mode
power supply
Mechanical Data
• Case: SOD-57 Sintered glass case
• Terminals: Plated axial leads, solderable per MILSTD-750, Method 2026
• Polarity: Color band denotes cathode end
• Mounting Position: Any
• Weight: approx. 369 mg

Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
features
- High Current Handling Capability
- Fast Intrinsic Diode
- Dynamaic dv/dt Rated
- Avalanche Rated
- Low RDS(on)
Advantages
- Easy to Mount
- space savings
- high power density
applications
- DC-DC Converters
- battery chargers
- Switch Mode and Resonant Mode Power Supplies
- DC choppers
- AC Motor Drives
- Uninterruptible Power Supplies
- High Speed Power Switching Applications

N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
features
- International Standard Package
- miniBLOC, with Aluminium Nitride Insulation
- Isolation voltage 2500 V~
- High Current Handling Capability
- Fast Intrinsic Diode
- Avalanche Rated
- Low RDS(on)
Advantages
- Easy to Mount
- space savings
- high power density
applications
- Synchronous Recification
- DC-DC Converters
- battery chargers
- Switched Mode and Resonant Mode Power Supplies
- DC choppers
- AC Motor Drives
- Uninterruptible Power Supplies
- High Speed Power Switching Applications

N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
features
- International standard packages
- Unclamped Inductive Switching (UIS) rated
- Low package inductance
- easy to drive and to protect
Advantages
- Easy to mount
- Space savings
- high power density

N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
features
- International standard package
- Encapsulating epoxy meets UL 94 V-0, flammability classification
- miniBLOC with Aluminium nitride insulation
- Fast recovery diode
- Unclamped Inductive Switching (UIS) rated
- Low package inductance - easy to drive and to protect
Advantages
- Easy to mount
- Space savings
- high power density

Features
• Controlled avalanche characteristic
• Low forward voltage
• Ultra fast recovery time
• Glass passivated junction
• Hermetically sealed package
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Applications
Very fast rectification diode e.g. for switch mode
power supply
Mechanical Data
Case: SOD-64
Terminals: Plated axial leads, solderable per MILSTD-
750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: approx. 858 mg

General Description
DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS.
Features
• Low V CE(sat) Fast IGBT technology
• Low switching loss
• Maximum junction temperature 175 °C
• V CE(sat) with positive temperature coefficient
• Fast & soft reverse recovery anti parallel FWD
• Lead free package
Typical Applications
• Inverter for motor drive
• AC and DC servo drive amplifier
• Uninterruptible power supply


Features
• Controlled avalanche characteristic
• Low forward voltage
• Ultra fast recovery time
• Glass passivated junction
• Hermetically sealed package
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Applications
Very fast rectification diode e.g. for switch mode
power supply
Mechanical Data
Case: SOD-64
Terminals: Plated axial leads, solderable per MILSTD-
750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: approx. 858 mg

Features
• Controlled avalanche characteristic
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• High surge current loading
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Mechanical Data:
• Case: SOD-57 Sintered glass case
• Terminals: Plated axial leads, solderable per MILSTD-750, Method 2026
• Polarity: Color band denotes cathode end
• Mounting Position: Any
• Weight: approx. 369 mg


Features:
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
Typical application
Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication.
Mechanical Data
• Case: SMC (DO-214AB)
• Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade
• Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3, M3, HE3, and HM3 suffix meets JESD 201 class 2 whisker test
• Polarity: for uni-directional types the band denotes cathode end, no marking on bi-directional types
Delivery in complete industrial packaging (7-inch reel / 850 pieces) possible, please contact our quotation department!

Features:
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
Typical application
Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication.
Mechanical Data
• Case: SMC (DO-214AB)
• Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade
• Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3, M3, HE3, and HM3 suffix meets JESD 201 class 2 whisker test
• Polarity: for uni-directional types the band denotes cathode end, no marking on bi-directional types
Delivery in complete industrial packaging (7-inch reel / 850 pieces) possible, please contact our quotation department!


Features:
• Ultra-Low On Resistance
• Avalanche Rated
• Low Package Inductance - Easy to Drive and to Protect
• 175°C Operating Temperature
• Fast Intrinsic Diode
Advantages
• Easy to Mount
• Space Savings
• High Power Density
Applications
• Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
• DC/DC Converters and Off-line UPS
• Primary Switch for 24V and 48V Systems
• Distributed Power Architechtures and VRMs
• Electronic Valve Train Systems
• High Current Switching Applications
• High Voltage Synchronous Recifier

features
- Advanced Process Technology
- ultra low on resistance
- 150°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- lead free
description
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive
avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

features
- Advanced Process Technology
- ultra low on resistance
- 150°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- lead free

- Advanced Process Technology
- ultra low on resistance
- 150°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- P channel
- lead free