INFINEON IDK12G65C5 - SMD SiC Schottky diode 650V, 12A, D²Pak

Prodotto
14.07 EUR Browse the detailed sheet with complete information, compare prices and find the features of PRODUCTNAME, proposed at the cost of PRICE CURRENCY; it classifies in the CATEGORY NAME; the sale is managed by SELLER NAME and the production is done by MANUFACTURER NAME.

Technical data


- revolutionary semiconductor material SiC
- no backward/no forward recovery
- temperature-independent switching behaviour
- extremely fast switching
- optimized for operation at high temperatures
- reduced cooling requirements
- reduced EMI

Application

- Switching power supplies
- Motor driver
- Solar converter
- Uninterruptible power supply

Delivery Cost: 9.95 EUR
Availability: in stock
Delivery Time: 4-5 business days
Condition: new

Comparison of Similar Products

QORVO UJ3D06504TS - SiC Schottky diode 650V, MPS, 4A, Gen-III, TO-220-2L QORVO UJ3D06504TS - SiC Schottky diode 650V, MPS, 4A, Gen-III, TO-220-2L 12.01 EUR Gen-III 4A - 650V SiC Schottky Diode

Description:
United Silicon Carbide, Inc. offers the 3rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175°C maximum junction temperature, these diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements.

Features:
- 175°C maximum operating junction temperature
- Easy paralleling
- Extremely fast switching not dependent on temperature
- No reverse or forward recovery
- Enhanced surge current capability, MPS structure
- Excellent thermal performance, Ag sintered
- 100% UIS tested
- AEC-Q101 qualified

Typical Applications:
- Power converters
- Industrial motor drives
- Switching-mode power supplies
- Power factor correction modules

Delivery in complete industrial packaging (Tube of 50 pieces) possible, please contact our quotation department!
WOLFSPEED C3D02065E - SMD-SiC Schottky diode 650V, 4A, TO252 WOLFSPEED C3D02065E - SMD-SiC Schottky diode 650V, 4A, TO252 10.97 EUR Technical data


- revolutionary semiconductor material SiC
- no backward/no forward recovery
- temperature-independent switching behaviour
- extremely fast switching
- optimized for operation at high temperatures
- AEC-Q101 certified

Applications

- Switching power supplies
- Gain diodes for power factor correction and DC/DC converter
- Freewheeling diodes in inverter stages
- Rectifier
QORVO UJ3D06506TS - SiC Schottky diode 650V, MPS, 6A, Gen-III, TO-220-2L QORVO UJ3D06506TS - SiC Schottky diode 650V, MPS, 6A, Gen-III, TO-220-2L 12.48 EUR Gen-III 6A - 650V SiC Schottky Diode

Description:
United Silicon Carbide, Inc. offers the 3rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175°C maximum junction temperature, these diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements.

Features:
- 175°C maximum operating junction temperature
- Easy paralleling
- Extremely fast switching not dependent on temperature
- No reverse or forward recovery
- Enhanced surge current capability, MPS structure
- Excellent thermal performance, Ag sintered
- 100% UIS tested
- AEC-Q101 qualified

Typical Applications:
- Power converters
- Industrial motor drives
- Switching-mode power supplies
- Power factor correction modules

Delivery in complete industrial packaging (Tube of 50 pieces) possible, please contact our quotation department!
QORVO UJ3C065080B3S - SiC cascode FET, 650V 25A Rdson 0.08R , D2PAK-3L QORVO UJ3C065080B3S - SiC cascode FET, 650V 25A Rdson 0.08R , D2PAK-3L 22.1 EUR 650V SiC-MOSFET-Cascode 80mR D2PAK-3L

Description:
United Silicon Carbide's cascode products co-package its high performance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive.

Features:
- Typical on-resistance Rds(on) of 80mR
- Maximum operating temperature of 175°C
- Excellent reverse recovery
- Low gate charge
- Low intrinsic capacitance
- ESD protected, HBM class 2

Typical Applications
- ElectricalVehicel charging
- PV inverters
- Switch mode power supplies
- Power factor correction modules
- Motor drives
- Induction heating
WOLFSPEED C3D06065E - SMD-SiC Schottky diode 650V, 9,5A, TO252 WOLFSPEED C3D06065E - SMD-SiC Schottky diode 650V, 9,5A, TO252 11.6 EUR Technical data


- revolutionary semiconductor material SiC
- no backward/no forward recovery
- temperature-independent switching behaviour
- extremely fast switching
- optimized for operation at high temperatures
- AEC-Q101 certified

Applications

- Switching power supplies
- Gain diodes for power factor correction and DC/DC converter
- Freewheeling diodes in inverter stages
- Rectifier
INFINEON IDD04SG60C - SMD-SiC Schottky diode 600V, 4A, TO252 INFINEON IDD04SG60C - SMD-SiC Schottky diode 600V, 4A, TO252 11.6 EUR Technical data


- revolutionary semiconductor material SiC
- no backward/no forward recovery
- temperature-independent switching behaviour
- extremely fast switching
- optimized for operation at high temperatures
- high surge current resistance
- JEDEC certified

Application

- Switching power supplies
- Motor driver
- Solar converter
- Uninterruptible power supply
TAIWAN-SEMICONDUCTOR MBRS10H100CTH - SMD-Schottky, 100 V, 10 A (2 x 5), D²Pak TAIWAN-SEMICONDUCTOR MBRS10H100CTH - SMD-Schottky, 100 V, 10 A (2 x 5), D²Pak 10.81 EUR Schottky diodes/hot carrier diodes
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TAIWAN-SEMICONDUCTOR MBRS10H100CT - SMD-Schottky, 100 V, 10 A (2 x 5), D²Pak TAIWAN-SEMICONDUCTOR MBRS10H100CT - SMD-Schottky, 100 V, 10 A (2 x 5), D²Pak 10.84 EUR Schottky diodes/hot carrier diodes
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TAIWAN-SEMICONDUCTOR MBRS15100CT - SMD-Schottky, 100 V, 15 A (2x7.5), D²Pak TAIWAN-SEMICONDUCTOR MBRS15100CT - SMD-Schottky, 100 V, 15 A (2x7.5), D²Pak 10.88 EUR Schottky diodes/hot carrier diodes
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TAIWAN-SEMICONDUCTOR MBRS20H100CTH - SMD-Schottky, 100 V, 20 A (2 x 10), D²Pak TAIWAN-SEMICONDUCTOR MBRS20H100CTH - SMD-Schottky, 100 V, 20 A (2 x 10), D²Pak 10.97 EUR Schottky diodes/hot carrier diodes
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QORVO UF3C065040B3 - SiC cascode FET, 650V 54A Rdson 0.042R , D2PAK-3L QORVO UF3C065040B3 - SiC cascode FET, 650V 54A Rdson 0.042R , D2PAK-3L 28.5 EUR 650V SiC-MOSFET-Cascode 42mR D2PAK-3L

Description:
United Silicon Carbide's cascode products co-package its high-performance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads when used with recommended RC snubbers, and any application requiring standard gate drive.

Features:
- Typical on-resistance Rds(on) of 42mR
- Maximum operating temperature of 175°C
- Excellent reverse recovery
- Low gate charge
- Low intrinsic capacitance
- ESD protected, HBM class 2
- Very low switching losses (required RC-snubber loss negligible under typical operating conditions)

Typical Applications
- ElectricalVehicel charging
- PV inverters
- Switch mode power supplies
- Power factor correction modules
- Motor drives
- Induction heating
QORVO UF3C065030B3 - SiC cascode FET, 650V 65A Rdson 0.027R D2PAK-3L QORVO UF3C065030B3 - SiC cascode FET, 650V 65A Rdson 0.027R D2PAK-3L 39.72 EUR 650V SiC-MOSFET-Cascode 27mR D2PAK-3L

Description:
United Silicon Carbide's cascode products co-package its high-performance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads when used with recommended RC snubbers, and any application requiring standard gate drive.

Features:
- Typical on-resistance Rds(on) of 27mR
- Maximum operating temperature of 175°C
- Excellent reverse recovery
- Low gate charge
- Low intrinsic capacitance
- ESD protected, HBM class 2
- Very low switching losses (required RC-snubber loss negligible under typical operating conditions)

Typical Applications
- ElectricalVehicel charging
- PV inverters
- Switch mode power supplies
- Power factor correction modules
- Motor drives
- Induction heating
TAIWAN-SEMICONDUCTOR SRAS8100 - SMD-Schottky, 100 V, 8 A, D²Pak TAIWAN-SEMICONDUCTOR SRAS8100 - SMD-Schottky, 100 V, 8 A, D²Pak 10.86 EUR Schottky diodes/hot carrier diodes
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STMICROELECTRONICS STPSC8H065D - SiC Schottky diode, 650V, 8A, TO220AC STMICROELECTRONICS STPSC8H065D - SiC Schottky diode, 650V, 8A, TO220AC 13.04 EUR This 8 A, 650 V SiC diode is an ultra-high power Schottky diode. It is manufactured from a silicon carbide substrate.
The tape-gap material allows a rated voltage of 650 V.
Due to the Schottky construction, there is no recovery at the junction.
The minimum capacitive switch-off behaviour is independent of temperature.

This STPSC8H065 is especially designed for use in PFC applications
suitable. This ST-SiC diode increases the performance under hard switching conditions.
Its high surge current capability ensures good robustness in transient phases.

Features

- no recovery charge in the operating area
- positive temperature coefficient
- high surge current capability
- Insulated housing TO-220AC Insulated:
- Isolated voltage: 2500 VRMS
- Typical housing capacitance: 7 pF
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TAIWAN-SEMICONDUCTOR MBRS2545CT - SMD-Schottky, 45 V, 30 A (2 x 15), D²Pak TAIWAN-SEMICONDUCTOR MBRS2545CT - SMD-Schottky, 45 V, 30 A (2 x 15), D²Pak 11.09 EUR Schottky diodes/hot carrier diodes
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  • Optimised for fast switching
  • Low forward voltage drop
TAIWAN-SEMICONDUCTOR SRAS860 - SMD-Schottky, 60 V, 8 A, D²Pak TAIWAN-SEMICONDUCTOR SRAS860 - SMD-Schottky, 60 V, 8 A, D²Pak 10.86 EUR Schottky diodes/hot carrier diodes
  • Optimised for fast switching
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TAIWAN-SEMICONDUCTOR MBRS2060CT - SMD-Schottky, 60 V, 20 A (2 x 10), D²Pak TAIWAN-SEMICONDUCTOR MBRS2060CT - SMD-Schottky, 60 V, 20 A (2 x 10), D²Pak 10.83 EUR Schottky diodes/hot carrier diodes
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TAIWAN-SEMICONDUCTOR SRAS2060 - SMD-Schottky, 60 V, 20 A, D²Pak TAIWAN-SEMICONDUCTOR SRAS2060 - SMD-Schottky, 60 V, 20 A, D²Pak 10.97 EUR Schottky diodes/hot carrier diodes
  • Optimised for fast switching
  • Low forward voltage drop
TAIWAN-SEMICONDUCTOR MBRS1545CT - SMD-Schottky, 45 V, 15 A (2 x 7.5), D²Pak TAIWAN-SEMICONDUCTOR MBRS1545CT - SMD-Schottky, 45 V, 15 A (2 x 7.5), D²Pak 10.88 EUR Schottky diodes/hot carrier diodes
  • Optimised for fast switching
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TAIWAN-SEMICONDUCTOR MBRS1560CT - SMD-Schottky, 60 V, 15 A (2 x 7.5), D²Pak TAIWAN-SEMICONDUCTOR MBRS1560CT - SMD-Schottky, 60 V, 15 A (2 x 7.5), D²Pak 10.88 EUR Schottky diodes/hot carrier diodes
  • Optimised for fast switching
  • Low forward voltage drop
WOLFSPEED C3D04060F - SiC Schottky diode, 600V, 2A, TO220AC-Fullpak WOLFSPEED C3D04060F - SiC Schottky diode, 600V, 2A, TO220AC-Fullpak 11.5 EUR Features

- 600-Volt Schottky rectifier
- Zero reverse recovery current
- Zero recovery voltage
- High-frequency operation
- positive temperature coefficient
- extremely fast switching
- positive temperature coefficient on VF - fully insulated housing

Advantages

- replace bipolar rectifiers with unipolar rectifiers
- minimum switching losses
- greater effectiveness
- Reduction of the heat sink requirement
- parallel devices without thermal outliers

Applications

- Switch mode power supply (SMPS)
- Boost diodes in PFC or DC/DC stages
- Freewheeling diodes in inverter stages
- AC/DC converters
WOLFSPEED C3D03060F - SiC Schottky diode, 600V, 2A, TO220AC-Fullpak WOLFSPEED C3D03060F - SiC Schottky diode, 600V, 2A, TO220AC-Fullpak 11.14 EUR Features

- 600-Volt Schottky rectifier
- Zero reverse recovery current
- Zero recovery voltage
- High-frequency operation
- positive temperature coefficient
- extremely fast switching
- positive temperature coefficient on VF - fully insulated housing

Advantages

- replace bipolar rectifiers with unipolar rectifiers
- minimum switching losses
- greater effectiveness
- Reduction of the heat sink requirement
- parallel devices without thermal outliers

Applications

- Switch mode power supply (SMPS)
- Boost diodes in PFC or DC/DC stages
- Freewheeling diodes in inverter stages
- AC/DC converters
WOLFSPEED C3D02060E - SMD-SiC Schottky diode 600V, 4A, TO252 WOLFSPEED C3D02060E - SMD-SiC Schottky diode 600V, 4A, TO252 10.88 EUR Technical data


- revolutionary semiconductor material SiC
- no backward/no forward recovery
- temperature-independent switching behaviour
- extremely fast switching
- optimized for operation at high temperatures
- AEC-Q101 certified

Applications

- Switching power supplies
- Gain diodes for power factor correction and DC/DC converter
- Freewheeling diodes in inverter stages
- Rectifier
IXYS DSI30-12AS - SMD-SI rectifier diode, 1200 V, 30 A, D²Pak (TO-263 AA) IXYS DSI30-12AS - SMD-SI rectifier diode, 1200 V, 30 A, D²Pak (TO-263 AA) 13.04 EUR DSI30-12AS SMD Standard Rectifier Single Diode

Features / Advantages:
• Planar passivated chips
• Very low leakage current
• Very low forward voltage drop
• Improved thermal behaviour

Applications:
• Diode for main rectification
• For single and three phase bridge configurations

Package:
• D²Pak
• Industry standard outline
• RoHS compliant
• Epoxy meets UL 94V-0
TAIWAN-SEMICONDUCTOR MBRS2560CT - SMD-Schottky, 60 V, 30 A (2 x 15), D²Pak TAIWAN-SEMICONDUCTOR MBRS2560CT - SMD-Schottky, 60 V, 30 A (2 x 15), D²Pak 11.09 EUR Schottky diodes/hot carrier diodes
  • Optimised for fast switching
  • Low forward voltage drop
WOLFSPEED C3D03065E - SMD-SiC Schottky diode 650V, 5A, TO252 WOLFSPEED C3D03065E - SMD-SiC Schottky diode 650V, 5A, TO252 11.14 EUR Technical data


- revolutionary semiconductor material SiC
- no backward/no forward recovery
- temperature-independent switching behaviour
- extremely fast switching
- optimized for operation at high temperatures
- AEC-Q101 certified

Applications

- Switching power supplies
- Gain diodes for power factor correction and DC/DC converter
- Freewheeling diodes in inverter stages
- Rectifier
INFINEON IDK05G65C5 - SMD SiC Schottky diode 650V, 5A, D²Pak INFINEON IDK05G65C5 - SMD SiC Schottky diode 650V, 5A, D²Pak 12.01 EUR Technical data


- revolutionary semiconductor material SiC
- no backward/no forward recovery
- temperature-independent switching behaviour
- extremely fast switching
- optimized for operation at high temperatures
- reduced cooling requirements
- reduced EMI

Application

- Switching power supplies
- Motor driver
- Solar converter
- Uninterruptible power supply
INFINEON IDK09G65C5 - SMD-SiC Schottky diode 650V, 9A, D²Pak INFINEON IDK09G65C5 - SMD-SiC Schottky diode 650V, 9A, D²Pak 13.67 EUR Technical data


- revolutionary semiconductor material SiC
- no backward/no forward recovery
- temperature-independent switching behaviour
- extremely fast switching
- optimized for operation at high temperatures
- reduced cooling requirements
- reduced EMI

Application

- Switching power supplies
- Motor driver
- Solar converter
- Uninterruptible power supply
IXYS DSI30-16AS - SMD-SI rectifier diode, 1600 V, 30 A, D²Pak (TO-263 AA) IXYS DSI30-16AS - SMD-SI rectifier diode, 1600 V, 30 A, D²Pak (TO-263 AA) 12.22 EUR DSI30-12AS SMD Standard Rectifier Single Diode

Features / Advantages:
• Planar passivated chips
• Very low leakage current
• Very low forward voltage drop
• Improved thermal behaviour

Applications:
• Diode for main rectification
• For single and three phase bridge configurations

Package:
• D²Pak
• Industry standard outline
• RoHS compliant
• Epoxy meets UL 94V-0
WOLFSPEED C3D10065E - SMD-SiC Schottky diode 650V, 15A, TO252 WOLFSPEED C3D10065E - SMD-SiC Schottky diode 650V, 15A, TO252 14.07 EUR Technical data


- revolutionary semiconductor material SiC
- no backward/no forward recovery
- temperature-independent switching behaviour
- extremely fast switching
- optimized for operation at high temperatures
- AEC-Q101 certified

Applications

- Switching power supplies
- Gain diodes for power factor correction and DC/DC converter
- Freewheeling diodes in inverter stages
- Rectifier
INFINEON IDD08SG60C - SMD-SiC Schottky diode 600V, 8A, TO252 INFINEON IDD08SG60C - SMD-SiC Schottky diode 600V, 8A, TO252 18.01 EUR Technical data


- revolutionary semiconductor material SiC
- no backward/no forward recovery
- temperature-independent switching behaviour
- extremely fast switching
- optimized for operation at high temperatures
- high surge current resistance
- JEDEC certified

Application

- Switching power supplies
- Motor driver
- Solar converter
- Uninterruptible power supply
WOLFSPEED C3D04065E - SMD-SiC Schottky diode 650V, 6A, TO252 WOLFSPEED C3D04065E - SMD-SiC Schottky diode 650V, 6A, TO252 11.4 EUR Technical data


- revolutionary semiconductor material SiC
- no backward/no forward recovery
- temperature-independent switching behaviour
- extremely fast switching
- optimized for operation at high temperatures
- AEC-Q101 certified

Applications

- Switching power supplies
- Gain diodes for power factor correction and DC/DC converter
- Freewheeling diodes in inverter stages
- Rectifier