INFINEON IDK09G65C5 - SMD-SiC Schottky diode 650V, 9A, D²Pak

13.67 EUR
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Technical data
- revolutionary semiconductor material SiC
- no backward/no forward recovery
- temperature-independent switching behaviour
- extremely fast switching
- optimized for operation at high temperatures
- reduced cooling requirements
- reduced EMI
Application
- Switching power supplies
- Motor driver
- Solar converter
- Uninterruptible power supply
Delivery Cost: 9.95 EUR
Availability: in stock
Delivery Time: 4-5 business days
Condition: new
Technical data
- revolutionary semiconductor material SiC
- no backward/no forward recovery
- temperature-independent switching behaviour
- extremely fast switching
- optimized for operation at high temperatures
- reduced cooling requirements
- reduced EMI
Application
- Switching power supplies
- Motor driver
- Solar converter
- Uninterruptible power supply
Delivery Cost: 9.95 EUR
Availability: in stock
Delivery Time: 4-5 business days
Condition: new
Comparison of Similar Products

- revolutionary semiconductor material SiC
- no backward/no forward recovery
- temperature-independent switching behaviour
- extremely fast switching
- optimized for operation at high temperatures
- AEC-Q101 certified
Applications
- Switching power supplies
- Gain diodes for power factor correction and DC/DC converter
- Freewheeling diodes in inverter stages
- Rectifier

Description:
United Silicon Carbide, Inc. offers the 3rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175°C maximum junction temperature, these diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements.
Features:
- 175°C maximum operating junction temperature
- Easy paralleling
- Extremely fast switching not dependent on temperature
- No reverse or forward recovery
- Enhanced surge current capability, MPS structure
- Excellent thermal performance, Ag sintered
- 100% UIS tested
- AEC-Q101 qualified
Typical Applications:
- Power converters
- Industrial motor drives
- Switching-mode power supplies
- Power factor correction modules
Delivery in complete industrial packaging (Tube of 50 pieces) possible, please contact our quotation department!

- revolutionary semiconductor material SiC
- no backward/no forward recovery
- temperature-independent switching behaviour
- extremely fast switching
- optimized for operation at high temperatures
- AEC-Q101 certified
Applications
- Switching power supplies
- Gain diodes for power factor correction and DC/DC converter
- Freewheeling diodes in inverter stages
- Rectifier

Description:
United Silicon Carbide, Inc. offers the 3rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175°C maximum junction temperature, these diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements.
Features:
- 175°C maximum operating junction temperature
- Easy paralleling
- Extremely fast switching not dependent on temperature
- No reverse or forward recovery
- Enhanced surge current capability, MPS structure
- Excellent thermal performance, Ag sintered
- 100% UIS tested
- AEC-Q101 qualified
Typical Applications:
- Power converters
- Industrial motor drives
- Switching-mode power supplies
- Power factor correction modules
Delivery in complete industrial packaging (Tube of 50 pieces) possible, please contact our quotation department!

Description:
United Silicon Carbide's cascode products co-package its high performance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive.
Features:
- Typical on-resistance Rds(on) of 80mR
- Maximum operating temperature of 175°C
- Excellent reverse recovery
- Low gate charge
- Low intrinsic capacitance
- ESD protected, HBM class 2
Typical Applications
- ElectricalVehicel charging
- PV inverters
- Switch mode power supplies
- Power factor correction modules
- Motor drives
- Induction heating

Features
• advanced Process Technology
• surface Mount (IRF9Z34NS)
• low-profile through-hole (IRF9Z34NL)
• 175°C Operating Temperature
• fast Switching
• fully Avalanche Rated
• P-Channel

- revolutionary semiconductor material SiC
- no backward/no forward recovery
- temperature-independent switching behaviour
- extremely fast switching
- optimized for operation at high temperatures
- high surge current resistance
- JEDEC certified
Application
- Switching power supplies
- Motor driver
- Solar converter
- Uninterruptible power supply

- Optimised for fast switching
- Low forward voltage drop

- Optimised for fast switching
- Low forward voltage drop

- Optimised for fast switching
- Low forward voltage drop

- Optimised for fast switching
- Low forward voltage drop

- Optimised for fast switching
- Low forward voltage drop

Description:
United Silicon Carbide's cascode products co-package its high-performance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads when used with recommended RC snubbers, and any application requiring standard gate drive.
Features:
- Typical on-resistance Rds(on) of 42mR
- Maximum operating temperature of 175°C
- Excellent reverse recovery
- Low gate charge
- Low intrinsic capacitance
- ESD protected, HBM class 2
- Very low switching losses (required RC-snubber loss negligible under typical operating conditions)
Typical Applications
- ElectricalVehicel charging
- PV inverters
- Switch mode power supplies
- Power factor correction modules
- Motor drives
- Induction heating

Description:
United Silicon Carbide's cascode products co-package its high-performance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads when used with recommended RC snubbers, and any application requiring standard gate drive.
Features:
- Typical on-resistance Rds(on) of 27mR
- Maximum operating temperature of 175°C
- Excellent reverse recovery
- Low gate charge
- Low intrinsic capacitance
- ESD protected, HBM class 2
- Very low switching losses (required RC-snubber loss negligible under typical operating conditions)
Typical Applications
- ElectricalVehicel charging
- PV inverters
- Switch mode power supplies
- Power factor correction modules
- Motor drives
- Induction heating

- Optimised for fast switching
- Low forward voltage drop

- Optimised for fast switching
- Low forward voltage drop

- Optimised for fast switching
- Low forward voltage drop

The tape-gap material allows a rated voltage of 650 V.
Due to the Schottky construction, there is no recovery at the junction.
The minimum capacitive switch-off behaviour is independent of temperature.
This STPSC8H065 is especially designed for use in PFC applications
suitable. This ST-SiC diode increases the performance under hard switching conditions.
Its high surge current capability ensures good robustness in transient phases.
Features
- no recovery charge in the operating area
- positive temperature coefficient
- high surge current capability
- Insulated housing TO-220AC Insulated:
- Isolated voltage: 2500 VRMS
- Typical housing capacitance: 7 pF

- Optimised for fast switching
- Low forward voltage drop

- Optimised for fast switching
- Low forward voltage drop

- Optimised for fast switching
- Low forward voltage drop

- revolutionary semiconductor material SiC
- no backward/no forward recovery
- temperature-independent switching behaviour
- extremely fast switching
- optimized for operation at high temperatures
- reduced cooling requirements
- reduced EMI
Application
- Switching power supplies
- Motor driver
- Solar converter
- Uninterruptible power supply

- Optimised for fast switching
- Low forward voltage drop

- Optimised for fast switching
- Low forward voltage drop

- Optimised for fast switching
- Low forward voltage drop

- Optimised for fast switching
- Low forward voltage drop

- Optimised for fast switching
- Low forward voltage drop


- 600-Volt Schottky rectifier
- Zero reverse recovery current
- Zero recovery voltage
- High-frequency operation
- positive temperature coefficient
- extremely fast switching
- positive temperature coefficient on VF - fully insulated housing
Advantages
- replace bipolar rectifiers with unipolar rectifiers
- minimum switching losses
- greater effectiveness
- Reduction of the heat sink requirement
- parallel devices without thermal outliers
Applications
- Switch mode power supply (SMPS)
- Boost diodes in PFC or DC/DC stages
- Freewheeling diodes in inverter stages
- AC/DC converters

- 600-Volt Schottky rectifier
- Zero reverse recovery current
- Zero recovery voltage
- High-frequency operation
- positive temperature coefficient
- extremely fast switching
- positive temperature coefficient on VF - fully insulated housing
Advantages
- replace bipolar rectifiers with unipolar rectifiers
- minimum switching losses
- greater effectiveness
- Reduction of the heat sink requirement
- parallel devices without thermal outliers
Applications
- Switch mode power supply (SMPS)
- Boost diodes in PFC or DC/DC stages
- Freewheeling diodes in inverter stages
- AC/DC converters


- revolutionary semiconductor material SiC
- no backward/no forward recovery
- temperature-independent switching behaviour
- extremely fast switching
- optimized for operation at high temperatures
- AEC-Q101 certified
Applications
- Switching power supplies
- Gain diodes for power factor correction and DC/DC converter
- Freewheeling diodes in inverter stages
- Rectifier

Features / Advantages:
• Planar passivated chips
• Very low leakage current
• Very low forward voltage drop
• Improved thermal behaviour
Applications:
• Diode for main rectification
• For single and three phase bridge configurations
Package:
• D²Pak
• Industry standard outline
• RoHS compliant
• Epoxy meets UL 94V-0

- Optimised for fast switching
- Low forward voltage drop

- revolutionary semiconductor material SiC
- no backward/no forward recovery
- temperature-independent switching behaviour
- extremely fast switching
- optimized for operation at high temperatures
- AEC-Q101 certified
Applications
- Switching power supplies
- Gain diodes for power factor correction and DC/DC converter
- Freewheeling diodes in inverter stages
- Rectifier

- revolutionary semiconductor material SiC
- no backward/no forward recovery
- temperature-independent switching behaviour
- extremely fast switching
- optimized for operation at high temperatures
- reduced cooling requirements
- reduced EMI
Application
- Switching power supplies
- Motor driver
- Solar converter
- Uninterruptible power supply

features
- Advanced Process Technology
- 175°C Operating temperature
- P-Channel MOSFET
- Fully Avalanche Rated
- Fast Switching
- lead free

Features / Advantages:
• Planar passivated chips
• Very low leakage current
• Very low forward voltage drop
• Improved thermal behaviour
Applications:
• Diode for main rectification
• For single and three phase bridge configurations
Package:
• D²Pak
• Industry standard outline
• RoHS compliant
• Epoxy meets UL 94V-0

- revolutionary semiconductor material SiC
- no backward/no forward recovery
- temperature-independent switching behaviour
- extremely fast switching
- optimized for operation at high temperatures
- AEC-Q101 certified
Applications
- Switching power supplies
- Gain diodes for power factor correction and DC/DC converter
- Freewheeling diodes in inverter stages
- Rectifier