INFINEON IDK09G65C5 - SMD-SiC Schottky diode 650V, 9A, D²Pak

Prodotto
13.67 EUR Consult the complete sheet with in-depth details, compare prices and identify the features of PRODUCTNAME, available at the cost of PRICE CURRENCY; falls into the CATEGORY NAME; the seller is SELLER NAME and the manufacturer is MANUFACTURER NAME.

Technical data


- revolutionary semiconductor material SiC
- no backward/no forward recovery
- temperature-independent switching behaviour
- extremely fast switching
- optimized for operation at high temperatures
- reduced cooling requirements
- reduced EMI

Application

- Switching power supplies
- Motor driver
- Solar converter
- Uninterruptible power supply

Delivery Cost: 9.95 EUR
Availability: in stock
Delivery Time: 4-5 business days
Condition: new

Comparison of Similar Products

WOLFSPEED C3D06065E - SMD-SiC Schottky diode 650V, 9,5A, TO252 WOLFSPEED C3D06065E - SMD-SiC Schottky diode 650V, 9,5A, TO252 11.6 EUR Technical data


- revolutionary semiconductor material SiC
- no backward/no forward recovery
- temperature-independent switching behaviour
- extremely fast switching
- optimized for operation at high temperatures
- AEC-Q101 certified

Applications

- Switching power supplies
- Gain diodes for power factor correction and DC/DC converter
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- Rectifier
QORVO UJ3D06504TS - SiC Schottky diode 650V, MPS, 4A, Gen-III, TO-220-2L QORVO UJ3D06504TS - SiC Schottky diode 650V, MPS, 4A, Gen-III, TO-220-2L 12.01 EUR Gen-III 4A - 650V SiC Schottky Diode

Description:
United Silicon Carbide, Inc. offers the 3rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175°C maximum junction temperature, these diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements.

Features:
- 175°C maximum operating junction temperature
- Easy paralleling
- Extremely fast switching not dependent on temperature
- No reverse or forward recovery
- Enhanced surge current capability, MPS structure
- Excellent thermal performance, Ag sintered
- 100% UIS tested
- AEC-Q101 qualified

Typical Applications:
- Power converters
- Industrial motor drives
- Switching-mode power supplies
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Delivery in complete industrial packaging (Tube of 50 pieces) possible, please contact our quotation department!
WOLFSPEED C3D02065E - SMD-SiC Schottky diode 650V, 4A, TO252 WOLFSPEED C3D02065E - SMD-SiC Schottky diode 650V, 4A, TO252 10.97 EUR Technical data


- revolutionary semiconductor material SiC
- no backward/no forward recovery
- temperature-independent switching behaviour
- extremely fast switching
- optimized for operation at high temperatures
- AEC-Q101 certified

Applications

- Switching power supplies
- Gain diodes for power factor correction and DC/DC converter
- Freewheeling diodes in inverter stages
- Rectifier
QORVO UJ3D06506TS - SiC Schottky diode 650V, MPS, 6A, Gen-III, TO-220-2L QORVO UJ3D06506TS - SiC Schottky diode 650V, MPS, 6A, Gen-III, TO-220-2L 12.48 EUR Gen-III 6A - 650V SiC Schottky Diode

Description:
United Silicon Carbide, Inc. offers the 3rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175°C maximum junction temperature, these diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements.

Features:
- 175°C maximum operating junction temperature
- Easy paralleling
- Extremely fast switching not dependent on temperature
- No reverse or forward recovery
- Enhanced surge current capability, MPS structure
- Excellent thermal performance, Ag sintered
- 100% UIS tested
- AEC-Q101 qualified

Typical Applications:
- Power converters
- Industrial motor drives
- Switching-mode power supplies
- Power factor correction modules

Delivery in complete industrial packaging (Tube of 50 pieces) possible, please contact our quotation department!
QORVO UJ3C065080B3S - SiC cascode FET, 650V 25A Rdson 0.08R , D2PAK-3L QORVO UJ3C065080B3S - SiC cascode FET, 650V 25A Rdson 0.08R , D2PAK-3L 22.1 EUR 650V SiC-MOSFET-Cascode 80mR D2PAK-3L

Description:
United Silicon Carbide's cascode products co-package its high performance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive.

Features:
- Typical on-resistance Rds(on) of 80mR
- Maximum operating temperature of 175°C
- Excellent reverse recovery
- Low gate charge
- Low intrinsic capacitance
- ESD protected, HBM class 2

Typical Applications
- ElectricalVehicel charging
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INFINEON IRF 9Z34NS - MOSFET, P-Ch, -55V -19A 0.1R, D2-PAK INFINEON IRF 9Z34NS - MOSFET, P-Ch, -55V -19A 0.1R, D2-PAK 10.97 EUR Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9Z34NL) is available for lowprofile applications.

Features
• advanced Process Technology
• surface Mount (IRF9Z34NS)
• low-profile through-hole (IRF9Z34NL)
• 175°C Operating Temperature
• fast Switching
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• P-Channel
INFINEON IDD04SG60C - SMD-SiC Schottky diode 600V, 4A, TO252 INFINEON IDD04SG60C - SMD-SiC Schottky diode 600V, 4A, TO252 11.6 EUR Technical data


- revolutionary semiconductor material SiC
- no backward/no forward recovery
- temperature-independent switching behaviour
- extremely fast switching
- optimized for operation at high temperatures
- high surge current resistance
- JEDEC certified

Application

- Switching power supplies
- Motor driver
- Solar converter
- Uninterruptible power supply
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TAIWAN-SEMICONDUCTOR MBRS10H100CT - SMD-Schottky, 100 V, 10 A (2 x 5), D²Pak TAIWAN-SEMICONDUCTOR MBRS10H100CT - SMD-Schottky, 100 V, 10 A (2 x 5), D²Pak 10.84 EUR Schottky diodes/hot carrier diodes
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TAIWAN-SEMICONDUCTOR MBRS15100CT - SMD-Schottky, 100 V, 15 A (2x7.5), D²Pak TAIWAN-SEMICONDUCTOR MBRS15100CT - SMD-Schottky, 100 V, 15 A (2x7.5), D²Pak 10.88 EUR Schottky diodes/hot carrier diodes
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TAIWAN-SEMICONDUCTOR MBRS20H100CTH - SMD-Schottky, 100 V, 20 A (2 x 10), D²Pak TAIWAN-SEMICONDUCTOR MBRS20H100CTH - SMD-Schottky, 100 V, 20 A (2 x 10), D²Pak 10.97 EUR Schottky diodes/hot carrier diodes
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QORVO UF3C065040B3 - SiC cascode FET, 650V 54A Rdson 0.042R , D2PAK-3L QORVO UF3C065040B3 - SiC cascode FET, 650V 54A Rdson 0.042R , D2PAK-3L 28.5 EUR 650V SiC-MOSFET-Cascode 42mR D2PAK-3L

Description:
United Silicon Carbide's cascode products co-package its high-performance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads when used with recommended RC snubbers, and any application requiring standard gate drive.

Features:
- Typical on-resistance Rds(on) of 42mR
- Maximum operating temperature of 175°C
- Excellent reverse recovery
- Low gate charge
- Low intrinsic capacitance
- ESD protected, HBM class 2
- Very low switching losses (required RC-snubber loss negligible under typical operating conditions)

Typical Applications
- ElectricalVehicel charging
- PV inverters
- Switch mode power supplies
- Power factor correction modules
- Motor drives
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QORVO UF3C065030B3 - SiC cascode FET, 650V 65A Rdson 0.027R D2PAK-3L QORVO UF3C065030B3 - SiC cascode FET, 650V 65A Rdson 0.027R D2PAK-3L 39.72 EUR 650V SiC-MOSFET-Cascode 27mR D2PAK-3L

Description:
United Silicon Carbide's cascode products co-package its high-performance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads when used with recommended RC snubbers, and any application requiring standard gate drive.

Features:
- Typical on-resistance Rds(on) of 27mR
- Maximum operating temperature of 175°C
- Excellent reverse recovery
- Low gate charge
- Low intrinsic capacitance
- ESD protected, HBM class 2
- Very low switching losses (required RC-snubber loss negligible under typical operating conditions)

Typical Applications
- ElectricalVehicel charging
- PV inverters
- Switch mode power supplies
- Power factor correction modules
- Motor drives
- Induction heating
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STMICROELECTRONICS STPSC8H065D - SiC Schottky diode, 650V, 8A, TO220AC STMICROELECTRONICS STPSC8H065D - SiC Schottky diode, 650V, 8A, TO220AC 13.04 EUR This 8 A, 650 V SiC diode is an ultra-high power Schottky diode. It is manufactured from a silicon carbide substrate.
The tape-gap material allows a rated voltage of 650 V.
Due to the Schottky construction, there is no recovery at the junction.
The minimum capacitive switch-off behaviour is independent of temperature.

This STPSC8H065 is especially designed for use in PFC applications
suitable. This ST-SiC diode increases the performance under hard switching conditions.
Its high surge current capability ensures good robustness in transient phases.

Features

- no recovery charge in the operating area
- positive temperature coefficient
- high surge current capability
- Insulated housing TO-220AC Insulated:
- Isolated voltage: 2500 VRMS
- Typical housing capacitance: 7 pF
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INFINEON IDK12G65C5 - SMD SiC Schottky diode 650V, 12A, D²Pak INFINEON IDK12G65C5 - SMD SiC Schottky diode 650V, 12A, D²Pak 14.07 EUR Technical data


- revolutionary semiconductor material SiC
- no backward/no forward recovery
- temperature-independent switching behaviour
- extremely fast switching
- optimized for operation at high temperatures
- reduced cooling requirements
- reduced EMI

Application

- Switching power supplies
- Motor driver
- Solar converter
- Uninterruptible power supply
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TAIWAN-SEMICONDUCTOR SRAS2060 - SMD-Schottky, 60 V, 20 A, D²Pak TAIWAN-SEMICONDUCTOR SRAS2060 - SMD-Schottky, 60 V, 20 A, D²Pak 10.97 EUR Schottky diodes/hot carrier diodes
  • Optimised for fast switching
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WOLFSPEED C3D03060F - SiC Schottky diode, 600V, 2A, TO220AC-Fullpak WOLFSPEED C3D03060F - SiC Schottky diode, 600V, 2A, TO220AC-Fullpak 11.14 EUR Features

- 600-Volt Schottky rectifier
- Zero reverse recovery current
- Zero recovery voltage
- High-frequency operation
- positive temperature coefficient
- extremely fast switching
- positive temperature coefficient on VF - fully insulated housing

Advantages

- replace bipolar rectifiers with unipolar rectifiers
- minimum switching losses
- greater effectiveness
- Reduction of the heat sink requirement
- parallel devices without thermal outliers

Applications

- Switch mode power supply (SMPS)
- Boost diodes in PFC or DC/DC stages
- Freewheeling diodes in inverter stages
- AC/DC converters
WOLFSPEED C3D04060F - SiC Schottky diode, 600V, 2A, TO220AC-Fullpak WOLFSPEED C3D04060F - SiC Schottky diode, 600V, 2A, TO220AC-Fullpak 11.5 EUR Features

- 600-Volt Schottky rectifier
- Zero reverse recovery current
- Zero recovery voltage
- High-frequency operation
- positive temperature coefficient
- extremely fast switching
- positive temperature coefficient on VF - fully insulated housing

Advantages

- replace bipolar rectifiers with unipolar rectifiers
- minimum switching losses
- greater effectiveness
- Reduction of the heat sink requirement
- parallel devices without thermal outliers

Applications

- Switch mode power supply (SMPS)
- Boost diodes in PFC or DC/DC stages
- Freewheeling diodes in inverter stages
- AC/DC converters
WOLFSPEED C3D02060E - SMD-SiC Schottky diode 600V, 4A, TO252 WOLFSPEED C3D02060E - SMD-SiC Schottky diode 600V, 4A, TO252 10.88 EUR Technical data


- revolutionary semiconductor material SiC
- no backward/no forward recovery
- temperature-independent switching behaviour
- extremely fast switching
- optimized for operation at high temperatures
- AEC-Q101 certified

Applications

- Switching power supplies
- Gain diodes for power factor correction and DC/DC converter
- Freewheeling diodes in inverter stages
- Rectifier
IXYS DSI30-12AS - SMD-SI rectifier diode, 1200 V, 30 A, D²Pak (TO-263 AA) IXYS DSI30-12AS - SMD-SI rectifier diode, 1200 V, 30 A, D²Pak (TO-263 AA) 13.04 EUR DSI30-12AS SMD Standard Rectifier Single Diode

Features / Advantages:
• Planar passivated chips
• Very low leakage current
• Very low forward voltage drop
• Improved thermal behaviour

Applications:
• Diode for main rectification
• For single and three phase bridge configurations

Package:
• D²Pak
• Industry standard outline
• RoHS compliant
• Epoxy meets UL 94V-0
TAIWAN-SEMICONDUCTOR MBRS2560CT - SMD-Schottky, 60 V, 30 A (2 x 15), D²Pak TAIWAN-SEMICONDUCTOR MBRS2560CT - SMD-Schottky, 60 V, 30 A (2 x 15), D²Pak 11.09 EUR Schottky diodes/hot carrier diodes
  • Optimised for fast switching
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WOLFSPEED C3D03065E - SMD-SiC Schottky diode 650V, 5A, TO252 WOLFSPEED C3D03065E - SMD-SiC Schottky diode 650V, 5A, TO252 11.14 EUR Technical data


- revolutionary semiconductor material SiC
- no backward/no forward recovery
- temperature-independent switching behaviour
- extremely fast switching
- optimized for operation at high temperatures
- AEC-Q101 certified

Applications

- Switching power supplies
- Gain diodes for power factor correction and DC/DC converter
- Freewheeling diodes in inverter stages
- Rectifier
INFINEON IDK05G65C5 - SMD SiC Schottky diode 650V, 5A, D²Pak INFINEON IDK05G65C5 - SMD SiC Schottky diode 650V, 5A, D²Pak 12.01 EUR Technical data


- revolutionary semiconductor material SiC
- no backward/no forward recovery
- temperature-independent switching behaviour
- extremely fast switching
- optimized for operation at high temperatures
- reduced cooling requirements
- reduced EMI

Application

- Switching power supplies
- Motor driver
- Solar converter
- Uninterruptible power supply
INFINEON IRF9Z34NSPBF - MOSFET P-Ch -55V -19A 0.1R D²Pak INFINEON IRF9Z34NSPBF - MOSFET P-Ch -55V -19A 0.1R D²Pak 10.97 EUR HEXFET® Power MOSFET

features
  • Advanced Process Technology
  • 175°C Operating temperature
  • P-Channel MOSFET
  • Fully Avalanche Rated
  • Fast Switching
  • lead free
IXYS DSI30-16AS - SMD-SI rectifier diode, 1600 V, 30 A, D²Pak (TO-263 AA) IXYS DSI30-16AS - SMD-SI rectifier diode, 1600 V, 30 A, D²Pak (TO-263 AA) 12.22 EUR DSI30-12AS SMD Standard Rectifier Single Diode

Features / Advantages:
• Planar passivated chips
• Very low leakage current
• Very low forward voltage drop
• Improved thermal behaviour

Applications:
• Diode for main rectification
• For single and three phase bridge configurations

Package:
• D²Pak
• Industry standard outline
• RoHS compliant
• Epoxy meets UL 94V-0
WOLFSPEED C3D10065E - SMD-SiC Schottky diode 650V, 15A, TO252 WOLFSPEED C3D10065E - SMD-SiC Schottky diode 650V, 15A, TO252 14.07 EUR Technical data


- revolutionary semiconductor material SiC
- no backward/no forward recovery
- temperature-independent switching behaviour
- extremely fast switching
- optimized for operation at high temperatures
- AEC-Q101 certified

Applications

- Switching power supplies
- Gain diodes for power factor correction and DC/DC converter
- Freewheeling diodes in inverter stages
- Rectifier