INFINEON IDK05G65C5 - SMD SiC Schottky diode 650V, 5A, D²Pak
12.01 EUR
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Technical data
- revolutionary semiconductor material SiC
- no backward/no forward recovery
- temperature-independent switching behaviour
- extremely fast switching
- optimized for operation at high temperatures
- reduced cooling requirements
- reduced EMI
Application
- Switching power supplies
- Motor driver
- Solar converter
- Uninterruptible power supply
Delivery Cost: 9.95 EUR
Availability: in stock
Delivery Time: 4-5 business days
Condition: new
Technical data
- revolutionary semiconductor material SiC
- no backward/no forward recovery
- temperature-independent switching behaviour
- extremely fast switching
- optimized for operation at high temperatures
- reduced cooling requirements
- reduced EMI
Application
- Switching power supplies
- Motor driver
- Solar converter
- Uninterruptible power supply
Delivery Cost: 9.95 EUR
Availability: in stock
Delivery Time: 4-5 business days
Condition: new
Comparison of Similar Products
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United Silicon Carbide, Inc. offers the 3rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175°C maximum junction temperature, these diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements.
Features:
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Technical data- revolutionary semiconductor material SiC
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- optimized for operation at high temperatures
- AEC-Q101 certified
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Gen-III 6A - 650V SiC Schottky DiodeDescription:
United Silicon Carbide, Inc. offers the 3rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175°C maximum junction temperature, these diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements.
Features:
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Features:
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Features:
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Features:
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This 8 A, 650 V SiC diode is an ultra-high power Schottky diode. It is manufactured from a silicon carbide substrate. The tape-gap material allows a rated voltage of 650 V.
Due to the Schottky construction, there is no recovery at the junction.
The minimum capacitive switch-off behaviour is independent of temperature.
This STPSC8H065 is especially designed for use in PFC applications
suitable. This ST-SiC diode increases the performance under hard switching conditions.
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- Insulated housing TO-220AC Insulated:
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- Typical housing capacitance: 7 pF
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application
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benefits
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Features and Benefits:
• High speed F5 TRENCHSTOP™ technology offering
• Best-in-Class efficiency in hard switching and resonant topologies
• 650V breakdown voltage
• Low gate charge QG
• IGBT copacked with RAPID 1 fast and soft antiparallel diode
• maximum junction temperature 175°C
• qualified according to JEDEC for target applications
• Pb-free lead plating, halogen-free mould compound, RoHS compliant
• Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/
Applications:
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• Best-in-Class efficiency in hard switching and resonant topologies
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Technical data- revolutionary semiconductor material SiC
- no backward/no forward recovery
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Application
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- Motor driver
- Solar converter
- Uninterruptible power supply
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- minimum switching losses
- greater effectiveness
- Reduction of the heat sink requirement
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Applications
- Switch mode power supply (SMPS)
- Boost diodes in PFC or DC/DC stages
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- positive temperature coefficient
- extremely fast switching
- positive temperature coefficient on VF - fully insulated housing
Advantages
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- minimum switching losses
- greater effectiveness
- Reduction of the heat sink requirement
- parallel devices without thermal outliers
Applications
- Switch mode power supply (SMPS)
- Boost diodes in PFC or DC/DC stages
- Freewheeling diodes in inverter stages
- AC/DC converters
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Technical data- revolutionary semiconductor material SiC
- no backward/no forward recovery
- temperature-independent switching behaviour
- extremely fast switching
- optimized for operation at high temperatures
- AEC-Q101 certified
Applications
- Switching power supplies
- Gain diodes for power factor correction and DC/DC converter
- Freewheeling diodes in inverter stages
- Rectifier
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Applications:
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• For single and three phase bridge configurations
Package:
• D²Pak
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Features and Benefits:
• High speed F5 TRENCHSTOP™ technology offering
• Best-in-Class efficiency in hard switching and resonant topologies
• 650V breakdown voltage
• Low gate charge QG
• IGBT copacked with RAPID 1 fast and soft antiparallel diode
• maximum junction temperature 175°C
• qualified according to JEDEC for target applications
• Pb-free lead plating, halogen-free mould compound, RoHS compliant
• Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/
Applications:
• Solar converters
• uninterruptible power supplies
• welding converters
• Mid to high range switching frequency converters